METHODS The content of phillyrin in forsythia was determinated by using Soxhlet extractor with methanol, separation and purification with the neutral aluminum oxide column and HPLC method. 方法采用甲醇索氏提取,中性氧化铝柱层析分离纯化、高效液相色谱法测定连翘中连翘苷含量。
After centrifugation, the supernatant pigment was adsorbed on a neutral aluminum oxide column. 离心后用中性氧化铝柱层析吸附上清液中的色素。
The author present a new developed neutral grounding resistor based on zinc oxide linear resistors which features high thermal capcity, low heating level, stable resistivity, safely and excellent service performance. 笔者介绍了新近开发的氧化锌线性电阻中性点接地电阻器,具有热容量大、温升低、阻值稳定、体积小、安全、可靠性高等特点,运行情况良好。
The Influence of Neutral Aluminum Oxide in the Determination of Traditional Chinese Medicine Sample 中性氧化铝影响中药制剂含量测定结果的考察
Result: Different result was given, when neutral Aluminum Oxide producted by different factory was used. 结果:未经中性氧化铝处理的样品及经不同生产厂家中性氧化铝处理的样品,测定结果差异明显。
The samples were extracted ultrasonically with 1 ∶ 1 ( v/ v) hexane/ acetone and then cleaned up by the columns of neutral aluminum oxide. 样品经正己烷丙酮(体积比为1∶1)超声波提取、氧化铝柱净化后,用GC/MS分离测定。
Methods: HPLC method was used to determine the sample treated by neutral Aluminum Oxide. 方法:采用HPLC法测定经中性氧化铝处理的样品。
The experiments show that such ceramics can be well sintered only under neutral atmosphere and at strictly controlled sintering temperature, with appropriate oxide ratio and sintering additive. 实验表明,在中性气氛下,适当地选择氧化物比例,加入一定量的添加剂,并控制好烧结温度,材料可以致密烧结。
METHODS: Pre-processing of sample was performed by solvent extraction and neutral aluminum oxide, the content was determined with evaporate light scattering detector ( ELSD) by HPLC. 方法:采用溶剂提取结合中性氧化铝进行样品前处理,用HPLC法,以蒸发光散射检测器测定黄芪甲苷含量。
NMOSFET ′ s after hot hole injection followed by hot electron injection produce serious degradation, which can be explained by neutral electron trap model and hot carrier induced gate oxide degradation under pulse stress. NMOSFET′s在热空穴注入后,热电子随后注入时,会有大的退化量,这可以用中性电子陷阱模型和脉冲应力条件下热载流子注入引起的栅氧化层退化来解释。
These trapped holes may recombine with electrons tunneling into gate oxide due to the ultrathin gate oxide, and then many neutral electron traps would be generated and the gate oxide current would be increased. 由于栅氧化层很薄,陷落的空穴会与隧穿入氧化层中的电子复合形成大量中性电子陷阱,使得栅隧穿电流不断增大。
In our modeling, the similar results were obtained but also found another interesting result i.e. oxide planar stress distribution is determined by the growth stress when the oxide neutral axis coincide outer surface of the oxide layer. 在我们的分析模型中,得到了相似的结果但是有了其它新发现。比如当氧化物中性轴与氧化物外表面重合时,氧化物平面应力分布是由生长应力来决定的。
The effects of acidic oxides SiO2, alkali oxides MgO, neutral oxide Al2O3 as additives on the alkali metal emission were investigated. 考察了酸性氧化物Si02、碱性氧化物MgO、中性氧化物Al203作为添加剂对碱金属析出行为的影响。
This is because lateral growth stress is independent of the position of the oxide neutral axis and depends only on oxidation time and oxide kinetics. 这是因为侧向生长应和氧化物中性的位置无关,而只是取决于氧化时间和氧化动力学。